Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate

Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate

Abstract Gallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline substrates, particularly on the (100) sur...

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Bibliographic Details
Main Authors: Tong Jiang, Hao Wang, Huaze Zhu, Junwei Cao, Xiaoqing Huo, Zhiqing Yang, Junshuai Li, Yaqing Ma, Shengnan Zhang, Xiang Xu, Wei Kong
Format: Article
Language:English
Published: Wiley 2025-05-01
Series:Advanced Science
Subjects:
β‐Ga₂O₃
single‐crystalline growth
twins
Van der Waals epitaxy
Online Access:https://doi.org/10.1002/advs.202417436
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