Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate
Abstract Gallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline substrates, particularly on the (100) sur...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-05-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202417436 |
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