Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach
The engineering of Schottky barrier height (SBH) at source/drain (S/D) contacts is a crucial technology in the next generation nanoelectronics. Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memor...
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Elsevier
2025-01-01
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| Series: | Applied Surface Science Advances |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523924001041 |
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| author | Sungjoo Song Jong-Hyun Kim Jongyoun Park Seung-Hwan Kim Dongjin Ko Hyejung Choi Seiyon Kim Hyun-Yong Yu |
| author_facet | Sungjoo Song Jong-Hyun Kim Jongyoun Park Seung-Hwan Kim Dongjin Ko Hyejung Choi Seiyon Kim Hyun-Yong Yu |
| author_sort | Sungjoo Song |
| collection | DOAJ |
| description | The engineering of Schottky barrier height (SBH) at source/drain (S/D) contacts is a crucial technology in the next generation nanoelectronics. Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memory (DRAM) due to its ultra-low off-current and low-temperature fabrication. However, a high contact resistance of a-IGZO still limits the device performance. Despite various attempts to address the high contact resistance issue, including the metal-interlayer-semiconductor (MIS) contact structure, a novel approach is needed. Here, we propose an oxygen-scavenger-layer MIS (OSL MIS) contact structure which employs oxygen areal density (OAD) modulated OSL as the interlayer. The OSL MIS has been shown to improve the contact resistance through three key effects. 1) The interlayer doping effect, 2) a diffusion of oxygen ions from a-IGZO to interlayer, generates shallow donors in a-IGZO, and 3) the movement of oxygen ion induces the interface dipole. With these effects, the effective SBH and a contact resistivity were reduced to 0.119 eV and 1.36E-5 Ω·cm2, respectively. The proposed OSL MIS contact structure of a-IGZO using OAD modulation technique, shows enormous potential in improving the performance of amorphous oxide semiconductor based advanced electronic devices. |
| format | Article |
| id | doaj-art-d8771e0aaf3942fbabffe4d2a2a1a8c3 |
| institution | Kabale University |
| issn | 2666-5239 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Applied Surface Science Advances |
| spelling | doaj-art-d8771e0aaf3942fbabffe4d2a2a1a8c32025-01-29T05:02:06ZengElsevierApplied Surface Science Advances2666-52392025-01-0125100676Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approachSungjoo Song0Jong-Hyun Kim1Jongyoun Park2Seung-Hwan Kim3Dongjin Ko4Hyejung Choi5Seiyon Kim6Hyun-Yong Yu7Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South KoreaDepartment of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South KoreaSchool of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South KoreaCenter for Spintronics, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South KoreaR&D Division, SK hynix Inc., Icheon, South KoreaR&D Division, SK hynix Inc., Icheon, South KoreaR&D Division, SK hynix Inc., Icheon, South KoreaDepartment of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea; School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea; Corresponding author.The engineering of Schottky barrier height (SBH) at source/drain (S/D) contacts is a crucial technology in the next generation nanoelectronics. Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memory (DRAM) due to its ultra-low off-current and low-temperature fabrication. However, a high contact resistance of a-IGZO still limits the device performance. Despite various attempts to address the high contact resistance issue, including the metal-interlayer-semiconductor (MIS) contact structure, a novel approach is needed. Here, we propose an oxygen-scavenger-layer MIS (OSL MIS) contact structure which employs oxygen areal density (OAD) modulated OSL as the interlayer. The OSL MIS has been shown to improve the contact resistance through three key effects. 1) The interlayer doping effect, 2) a diffusion of oxygen ions from a-IGZO to interlayer, generates shallow donors in a-IGZO, and 3) the movement of oxygen ion induces the interface dipole. With these effects, the effective SBH and a contact resistivity were reduced to 0.119 eV and 1.36E-5 Ω·cm2, respectively. The proposed OSL MIS contact structure of a-IGZO using OAD modulation technique, shows enormous potential in improving the performance of amorphous oxide semiconductor based advanced electronic devices.http://www.sciencedirect.com/science/article/pii/S2666523924001041A-IGZOContact resistanceSchottky barrier heightMetal-interlayer-semiconductorOxygen areal densityPlasma treatment |
| spellingShingle | Sungjoo Song Jong-Hyun Kim Jongyoun Park Seung-Hwan Kim Dongjin Ko Hyejung Choi Seiyon Kim Hyun-Yong Yu Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach Applied Surface Science Advances A-IGZO Contact resistance Schottky barrier height Metal-interlayer-semiconductor Oxygen areal density Plasma treatment |
| title | Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach |
| title_full | Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach |
| title_fullStr | Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach |
| title_full_unstemmed | Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach |
| title_short | Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach |
| title_sort | novel source drain contact structure for a igzo devices oxygen scavenger layer metal interlayer semiconductor osl mis approach |
| topic | A-IGZO Contact resistance Schottky barrier height Metal-interlayer-semiconductor Oxygen areal density Plasma treatment |
| url | http://www.sciencedirect.com/science/article/pii/S2666523924001041 |
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