Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach

Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach

The engineering of Schottky barrier height (SBH) at source/drain (S/D) contacts is a crucial technology in the next generation nanoelectronics. Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memor...

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Bibliographic Details
Main Authors: Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Applied Surface Science Advances
Subjects:
A-IGZO
Contact resistance
Schottky barrier height
Metal-interlayer-semiconductor
Oxygen areal density
Plasma treatment
Online Access:http://www.sciencedirect.com/science/article/pii/S2666523924001041
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