APA (7th ed.) Citation

Song, S., Kim, J., Park, J., Kim, S., Ko, D., Choi, H., . . . Yu, H. Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach. Elsevier.

Chicago Style (17th ed.) Citation

Song, Sungjoo, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, and Hyun-Yong Yu. Novel Source/drain Contact Structure for A-IGZO Devices: Oxygen-scavenger-layer Metal-interlayer-semiconductor (OSL MIS) Approach. Elsevier.

MLA (9th ed.) Citation

Song, Sungjoo, et al. Novel Source/drain Contact Structure for A-IGZO Devices: Oxygen-scavenger-layer Metal-interlayer-semiconductor (OSL MIS) Approach. Elsevier.