$Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon$

Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon

Long diffusion lengths of photoexcited charge carriers are crucial for high power conversion efficiencies of photoelectrochemical and photovoltaic devices. Time-resolved photoconductance measurements are often used to determine diffusion lengths in conventional semiconductors. However, effects such...

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Bibliographic Details
Main Authors:	Markus Schleuning, Moritz Kölbach, Fatwa F. Abdi, Klaus Schwarzburg, Martin Stolterfoht, Rainer Eichberger, Roel van de Krol, Dennis Friedrich, Hannes Hempel
Format:	Article
Language:	English
Published:	American Physical Society 2022-09-01
Series:	PRX Energy
Online Access:	http://doi.org/10.1103/PRXEnergy.1.023008
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Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon

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