Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film
The thermal evaporation technique is used to investigate the structural and optical properties of ZnIn2(Se1-0.2Te0.2)4 (ZIST) chalcopyrite semiconductors. ZnIn2(Se0.8Te0.2)4 thin films with a thickness of 500 nm are taken into consideration, and the effect of annealing at various temperatures range...
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University of Baghdad
2025-01-01
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| Series: | Ibn Al-Haitham Journal for Pure and Applied Sciences |
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| Online Access: | https://jih.uobaghdad.edu.iq/index.php/j/article/view/3982 |
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| author | Bushra H. Hussein Husham Kamil Mahmood |
| author_facet | Bushra H. Hussein Husham Kamil Mahmood |
| author_sort | Bushra H. Hussein |
| collection | DOAJ |
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The thermal evaporation technique is used to investigate the structural and optical properties of ZnIn2(Se1-0.2Te0.2)4 (ZIST) chalcopyrite semiconductors. ZnIn2(Se0.8Te0.2)4 thin films with a thickness of 500 nm are taken into consideration, and the effect of annealing at various temperatures ranged from R.T, 373, 473 K. (ZIST) Thin film is widely regarded as a remarkable semiconductor material for the development of second-generation solar cells. ZnIn2(Se0.8Te0.2)4 films are polycrystalline with excellent stoichiometric composition, as shown by XRD and AFM investigations. According to a structural study, annealing the films after they were deposited increased the average grain size and crystallite size after annealing, as well as one of the favored orientations of the polycrystalline phase is along the (112) direction. The wavelength range used to determine these films' optical characteristics was 400 nm–1000 nm. Semiconductors ZnIn2(Se1-0.2Te0.2)4 have direct band gaps of 1.7, 1.65, and 1.6 eV respectively. The calculated optical constant includes the refractive index. extinction coefficient. real and imaginary components of dielectric constant.
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| format | Article |
| id | doaj-art-d3d1ec8efb79498ba72c6a359d7386da |
| institution | Kabale University |
| issn | 1609-4042 2521-3407 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | University of Baghdad |
| record_format | Article |
| series | Ibn Al-Haitham Journal for Pure and Applied Sciences |
| spelling | doaj-art-d3d1ec8efb79498ba72c6a359d7386da2025-01-22T01:21:03ZengUniversity of BaghdadIbn Al-Haitham Journal for Pure and Applied Sciences1609-40422521-34072025-01-0138110.30526/38.1.3982Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin FilmBushra H. Hussein0https://orcid.org/0000-0002-5400-4010Husham Kamil Mahmood1https://orcid.org/0009-0001-1410-9686Department of Physics, College of Education for Pure Science (Ibn Al-Haitham), University of Baghdad, Baghdad, Iraq.Department of Physics, College of Education for Pure Science (Ibn Al-Haitham), University of Baghdad, Baghdad, Iraq. The thermal evaporation technique is used to investigate the structural and optical properties of ZnIn2(Se1-0.2Te0.2)4 (ZIST) chalcopyrite semiconductors. ZnIn2(Se0.8Te0.2)4 thin films with a thickness of 500 nm are taken into consideration, and the effect of annealing at various temperatures ranged from R.T, 373, 473 K. (ZIST) Thin film is widely regarded as a remarkable semiconductor material for the development of second-generation solar cells. ZnIn2(Se0.8Te0.2)4 films are polycrystalline with excellent stoichiometric composition, as shown by XRD and AFM investigations. According to a structural study, annealing the films after they were deposited increased the average grain size and crystallite size after annealing, as well as one of the favored orientations of the polycrystalline phase is along the (112) direction. The wavelength range used to determine these films' optical characteristics was 400 nm–1000 nm. Semiconductors ZnIn2(Se1-0.2Te0.2)4 have direct band gaps of 1.7, 1.65, and 1.6 eV respectively. The calculated optical constant includes the refractive index. extinction coefficient. real and imaginary components of dielectric constant. https://jih.uobaghdad.edu.iq/index.php/j/article/view/3982Chalcopyrite semiconductorsXRDband gaps ZnIn2(Se1-0.2Te0.2)4thin film |
| spellingShingle | Bushra H. Hussein Husham Kamil Mahmood Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film Ibn Al-Haitham Journal for Pure and Applied Sciences Chalcopyrite semiconductors XRD band gaps ZnIn2(Se1-0.2Te0.2)4 thin film |
| title | Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film |
| title_full | Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film |
| title_fullStr | Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film |
| title_full_unstemmed | Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film |
| title_short | Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film |
| title_sort | preparation and study annealing effect on structure and optical properties of znin2 se0 8te0 2 4 thin film |
| topic | Chalcopyrite semiconductors XRD band gaps ZnIn2(Se1-0.2Te0.2)4 thin film |
| url | https://jih.uobaghdad.edu.iq/index.php/j/article/view/3982 |
| work_keys_str_mv | AT bushrahhussein preparationandstudyannealingeffectonstructureandopticalpropertiesofznin2se08te024thinfilm AT hushamkamilmahmood preparationandstudyannealingeffectonstructureandopticalpropertiesofznin2se08te024thinfilm |