Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition
This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern a...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/906037 |
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| author | Teng-Hsiang Chang Chiao Chang Yen-Ho Chu Chien-Chieh Lee Jenq-Yang Chang I-Chen Chen Tomi T. Li |
| author_facet | Teng-Hsiang Chang Chiao Chang Yen-Ho Chu Chien-Chieh Lee Jenq-Yang Chang I-Chen Chen Tomi T. Li |
| author_sort | Teng-Hsiang Chang |
| collection | DOAJ |
| description | This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing. |
| format | Article |
| id | doaj-art-d27e04eac54c4fa880f45910365944a6 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-d27e04eac54c4fa880f45910365944a62025-02-03T01:03:39ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/906037906037Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor DepositionTeng-Hsiang Chang0Chiao Chang1Yen-Ho Chu2Chien-Chieh Lee3Jenq-Yang Chang4I-Chen Chen5Tomi T. Li6Department of Optics and Photonics, National Central University, Jhongli 32001, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Jhongli 32001, TaiwanDepartment of Optics and Photonics, National Central University, Jhongli 32001, TaiwanOptical Science Center, National Central University, Jhongli 32001, TaiwanDepartment of Optics and Photonics, National Central University, Jhongli 32001, TaiwanInstitute of Materials Science and Engineering, National Central University, Jhongli 32001, TaiwanDepartment of Mechanical Engineering, National Central University, Jhongli 32001, TaiwanThis paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.http://dx.doi.org/10.1155/2014/906037 |
| spellingShingle | Teng-Hsiang Chang Chiao Chang Yen-Ho Chu Chien-Chieh Lee Jenq-Yang Chang I-Chen Chen Tomi T. Li Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition International Journal of Photoenergy |
| title | Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition |
| title_full | Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition |
| title_fullStr | Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition |
| title_full_unstemmed | Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition |
| title_short | Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition |
| title_sort | low temperature 180°c growth of smooth surface germanium epilayers on silicon substrates using electron cyclotron resonance chemical vapor deposition |
| url | http://dx.doi.org/10.1155/2014/906037 |
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