Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

We have conducted numerical simulation of p-GaN/In0.12Ga0.88N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar...

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Bibliographic Details
Main Authors: Aniruddha Singh Kushwaha, Pramila Mahala, Chenna Dhanavantri
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/819637
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