A Mathematical Formulation for Diamagnetism in Tetrahedrally Bonded Semiconductors

An expression for the magnetic susceptibility tensor corresponding to diamagnetic contribution in tetrahedrally bonded semiconductors is derived; this formulation refers to the crystalline state. In addition, a comparison with the amorphous case is outlined.

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Bibliographic Details
Main Authors: M. A. Grado-Caffaro, M. Grado-Caffaro
Format: Article
Language:English
Published: Wiley 1997-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1997/58249
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Description
Summary:An expression for the magnetic susceptibility tensor corresponding to diamagnetic contribution in tetrahedrally bonded semiconductors is derived; this formulation refers to the crystalline state. In addition, a comparison with the amorphous case is outlined.
ISSN:0882-7516
1563-5031