A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping
The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their electronic doping. We investigate a methodology for As doping of Si nanostructures taking advantages of ion beam implantation and nanosecond laser irradiation melting dynamics. We illustrate the behaviou...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
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| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2012/635705 |
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