Ultra-small Hysteresis IGZO Thin-Film Transistors with Room-Temperature Sputtered SiO2 as Dielectric Layer
A sputtered silicon dioxide dielectric is prepared for fabrication of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs). We analyzed the dependence of device characteristics on gate voltage range. Clockwise hysteresis occurs at a low gate voltage ( Vgs ≤ 3 V) due to oxide traps near the...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Tamkang University Press
2025-03-01
|
| Series: | Journal of Applied Science and Engineering |
| Subjects: | |
| Online Access: | http://jase.tku.edu.tw/articles/jase-202510-28-10-0011 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|