The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC
In0.53Ga0.47As/GaAs-based quantum dot intermediate band solar cells (QDIBSCs) have been designed and optimized for the next generation photovoltaic technology. The wave behavior of charge carriers inside the dot and their barrier have been analyzed with different dot sizes and interdot spacing. The...
Saved in:
Main Authors: | Sayeda Anika Amin, Md. Tanvir Hasan, Muhammad Shaffatul Islam |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2017-01-01
|
Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2017/9160381 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs
PHEMTs
by: K. F. Yarn, et al.
Published: (2002-01-01) -
DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
by: H. C. Chen
Published: (1998-01-01) -
High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding
by: Yeongho Kim, et al.
Published: (2025-02-01) -
Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
by: Mohamed Omri, et al.
Published: (2021-01-01) -
A Brief Discussion on Energy Considerations for GaAs Parabolic Quantum Dots
by: M. A. Grado-Caffaro, et al.
Published: (2001-01-01)