Low Power Emission Pulse Generation Circuit Based on n-Type Amorphous In-Ga-Zn-Oxide Transistors for Active-Matrix Organic Light-Emitting Diode Displays
This paper presents a low power emission (EM) pulse generation circuit using n-type amorphous In-Ga-Zn-Oxide (a-IGZO) semiconductor thin-film transistors (TFTs). The low power consumption is achieved by avoiding the shoot-through current paths through an optimized inverter circuit. The proposed circ...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-10-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/11/1330 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This paper presents a low power emission (EM) pulse generation circuit using n-type amorphous In-Ga-Zn-Oxide (a-IGZO) semiconductor thin-film transistors (TFTs). The low power consumption is achieved by avoiding the shoot-through current paths through an optimized inverter circuit. The proposed circuit consists of 12 TFTs and 2 capacitors including 6 TFTs and 1 capacitor for the inverter circuit to control the pulling-down TFTs. In addition, the wider variance range of the threshold voltage (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">V</mi><mi>th</mi></msub></semantics></math></inline-formula>) from <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>−</mo><mn>4</mn></mrow></semantics></math></inline-formula> V to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2.5</mn></mrow></semantics></math></inline-formula> V is covered by additional 6 TFTs for series-connected two transistor (STT) schemes and two low supply voltages to take into account the negative <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">V</mi><mi>th</mi></msub></semantics></math></inline-formula> of depletion-mode TFTs. The simulation of 30 EM circuits is conducted over a 6.1-inch active-matrix organic light-emitting diode display of 120 Hz refresh rate and 3840 × 2160 (UHD) resolution. The power consumption of the EM circuit with the proposed inverter is measured at the low values from 0.836 mW to 0.568 mW over pulse widths from 3 to 2157 horizontal times. It is ensured that the proposed circuit achieves the low power consumption regardless of pulse widths. |
|---|---|
| ISSN: | 2072-666X |