Temperature Dependent Switching Behavior of BFN Thin Films: a Wide Band Gap Semiconductor

The thin film of complex perovskite Ba(Fe0.5Nb0.5)O3 (BFN) was prepared through Pulsed Laser Deposition (PLD) technique. XRD and AFM studies show single cubic phase with well developed nano size grains of BFN compound. Swift Heavy Ion (SHI) irradiation on BFN of O+7 ions up to 1 × 1013 ions per cc f...

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Bibliographic Details
Main Authors: Devang D. Shah, P.K. Mehta, M.S. Desai, C.J. Panchal
Format: Article
Language:English
Published: Sumy State University 2011-01-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_330-340.pdf
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