The role of Sb-over-Te ratio on the structural evolution of GeSbTe phase-change materials
Abstract Phase-change memory is a mature technology suitable for next generation of non-volatile memory, meeting the strict requirements of embedded applications. This was achieved by the stoichiometry tuning of GeSbTe (GST) alloy, enhancing the stability of the programmed states at high temperature...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1038/s41598-025-97185-y |
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