The role of Sb-over-Te ratio on the structural evolution of GeSbTe phase-change materials

Abstract Phase-change memory is a mature technology suitable for next generation of non-volatile memory, meeting the strict requirements of embedded applications. This was achieved by the stoichiometry tuning of GeSbTe (GST) alloy, enhancing the stability of the programmed states at high temperature...

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Bibliographic Details
Main Authors: O. Daoudi, E. Nolot, M. Bernard, M. Dartois, M. Tessaire, L. Fellouh, J. Li, N. Bernier, F. Fillot, V.-H. Le, H. Renevier, G. Navarro
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Scientific Reports
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Online Access:https://doi.org/10.1038/s41598-025-97185-y
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