Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer

Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer

Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the...

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Bibliographic Details
Main Authors: Hogyoung Kim, Ye Bin Won, Byung Joon Choi
Format: Article
Language:English
Published: Polish Academy of Sciences 2024-06-01
Series:Archives of Metallurgy and Materials
Subjects:
zno interlayer
gan
inhomogeneous schottky barrier
interface states
Online Access:https://journals.pan.pl/Content/131843/AMM-2024-2-14-Byung%20Joon%20Choi.pdf
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