Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model...
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Main Authors: | Su Yeon Jung, Hyunwoo Kim, Jongmin Lee, Jang Hyun Kim |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10685408/ |
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