Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor

We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model...

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Bibliographic Details
Main Authors: Su Yeon Jung, Hyunwoo Kim, Jongmin Lee, Jang Hyun Kim
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10685408/
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