Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10685408/ |
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| author | Su Yeon Jung Hyunwoo Kim Jongmin Lee Jang Hyun Kim |
| author_facet | Su Yeon Jung Hyunwoo Kim Jongmin Lee Jang Hyun Kim |
| author_sort | Su Yeon Jung |
| collection | DOAJ |
| description | We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model parameters through calibration, we extracted five key parameters from the hysteretic transfer curves of the FeFET: threshold voltage (Vth), on current (Iin), subthreshold swing (SS), off current (Ioff), and gate-induced drain leakage (GIDL). The extracted parameters were compared based on the presence or absence of FE and the ferroelectric thickness. It was confirmed that the presence of FE leads to increased variation due to dipole alignment with WFV, and that the electric field is maintained even with an increase in ferroelectric thickness |
| format | Article |
| id | doaj-art-c8f5d1672cf2455eb0650383fada5d21 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-c8f5d1672cf2455eb0650383fada5d212025-01-29T00:00:32ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011277978410.1109/JEDS.2024.346559410685408Impact of Work-Function Variation in Ferroelectric Field-Effect TransistorSu Yeon Jung0https://orcid.org/0009-0003-5435-3071Hyunwoo Kim1https://orcid.org/0000-0001-7588-3723Jongmin Lee2https://orcid.org/0000-0002-6167-7926Jang Hyun Kim3https://orcid.org/0000-0002-5936-4314Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, South KoreaDepartment of Electrical and Electronics Engineering, Konkuk University, Gwangjin, South KoreaDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, South KoreaDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, South KoreaWe analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model parameters through calibration, we extracted five key parameters from the hysteretic transfer curves of the FeFET: threshold voltage (Vth), on current (Iin), subthreshold swing (SS), off current (Ioff), and gate-induced drain leakage (GIDL). The extracted parameters were compared based on the presence or absence of FE and the ferroelectric thickness. It was confirmed that the presence of FE leads to increased variation due to dipole alignment with WFV, and that the electric field is maintained even with an increase in ferroelectric thicknesshttps://ieeexplore.ieee.org/document/10685408/Ferroelectric field-effect transistor (FeFET)work-function variation (WFV)ferroelectricferroelectricity (FE)dipole alignmentelectric field |
| spellingShingle | Su Yeon Jung Hyunwoo Kim Jongmin Lee Jang Hyun Kim Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor IEEE Journal of the Electron Devices Society Ferroelectric field-effect transistor (FeFET) work-function variation (WFV) ferroelectric ferroelectricity (FE) dipole alignment electric field |
| title | Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor |
| title_full | Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor |
| title_fullStr | Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor |
| title_full_unstemmed | Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor |
| title_short | Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor |
| title_sort | impact of work function variation in ferroelectric field effect transistor |
| topic | Ferroelectric field-effect transistor (FeFET) work-function variation (WFV) ferroelectric ferroelectricity (FE) dipole alignment electric field |
| url | https://ieeexplore.ieee.org/document/10685408/ |
| work_keys_str_mv | AT suyeonjung impactofworkfunctionvariationinferroelectricfieldeffecttransistor AT hyunwookim impactofworkfunctionvariationinferroelectricfieldeffecttransistor AT jongminlee impactofworkfunctionvariationinferroelectricfieldeffecttransistor AT janghyunkim impactofworkfunctionvariationinferroelectricfieldeffecttransistor |