Stability of GaN HEMT Device Under Static and Dynamic Gate Stress
In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve...
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| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10422723/ |
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