Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve...

Full description

Saved in:
Bibliographic Details
Main Authors: Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
p-GaN HEMT
pulse I-V
positive bias temperature instability (PBTI)
threshold voltage
Stability
mechanism
Online Access:https://ieeexplore.ieee.org/document/10422723/
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://ieeexplore.ieee.org/document/10422723/

Similar Items