Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve...

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Main Authors: Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
p-GaN HEMT
pulse I-V
positive bias temperature instability (PBTI)
threshold voltage
Stability
mechanism
Online Access:https://ieeexplore.ieee.org/document/10422723/
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Summary:In this work, we investigated the stability of a <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate stability by using capacitance to release the hole into the <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN layer to mitigate the threshold voltage shift. Through pulse I-V measurement and positive bias temperature instability (PBTI) test, the carrier transporting behavior in the gate region achieved dynamic equilibrium at 5 V gate bias. The positive gate shift <inline-formula> <tex-math notation="LaTeX">$(\Delta V_{\mathrm{ TH}})$ </tex-math></inline-formula> of 0.4 V is observed with increasing voltage from 3 V to 8 V; <inline-formula> <tex-math notation="LaTeX">$\Delta V_{\mathrm{ TH}}$ </tex-math></inline-formula> initially drops smoothly after release stresses by external capacitance discharge. Finally, integrated passive components and <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN gate HEMT circuit are recommended to mitigate the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ TH}}$ </tex-math></inline-formula> instability for E-mode HEMT.
ISSN:2168-6734

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