Deposition and Surface Modification of Low-k Thin Films For ILD Application In ULSI Circuits
The low-k thin films have been deposited successfully by sol gel technique using tetraethylorthosilicate (TEOS) precursor and the surface of deposited thin films have been modified by wet chemical treatment using trimethylcholorsilane (TMCS) and hexane solution with 15 % volume ratio to remove the h...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%201/articles/jnep_2011_V3_N1(Part1)_106-110.pdf |
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