Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target
CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/929454 |
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| author | Min Xie Daming Zhuang Ming Zhao Zuolong Zhuang Liangqi Ouyang Xiaolong Li Jun Song |
| author_facet | Min Xie Daming Zhuang Ming Zhao Zuolong Zhuang Liangqi Ouyang Xiaolong Li Jun Song |
| author_sort | Min Xie |
| collection | DOAJ |
| description | CZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of several hundred nanometers can be obtained after sulfurization. The optical band gap of the films is estimated to be 1.57 eV. The electrical properties of the 4.04% efficient solar cell were investigated and it has been found that cell has obvious deficiency in minority carrier lifetime. This deficiency should be responsible for the low Jsc and low Voc of our cell. |
| format | Article |
| id | doaj-art-c6494c9c35bf42bbae30ed2372d6ecdf |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-c6494c9c35bf42bbae30ed2372d6ecdf2025-02-03T05:46:56ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/929454929454Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S TargetMin Xie0Daming Zhuang1Ming Zhao2Zuolong Zhuang3Liangqi Ouyang4Xiaolong Li5Jun Song6Key Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Material Science and Engineering, Tsinghua University, Haidian District, Beijing 100084, ChinaKey Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Material Science and Engineering, Tsinghua University, Haidian District, Beijing 100084, ChinaKey Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Material Science and Engineering, Tsinghua University, Haidian District, Beijing 100084, ChinaNingbo Nianxin Mechanic Company Limited, Zhejiang 315506, ChinaKey Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Material Science and Engineering, Tsinghua University, Haidian District, Beijing 100084, ChinaKey Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Material Science and Engineering, Tsinghua University, Haidian District, Beijing 100084, ChinaKey Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Material Science and Engineering, Tsinghua University, Haidian District, Beijing 100084, ChinaCZTS thin films were fabricated through sputtering from a quaternary Cu-Zn-Sn-S target, followed by a sulfurization process. CZTS thin-film solar cells were also fabricated and a highest efficiency of 4.04% was achieved. It has been found that obvious Zn loss occurs during the sputtering and poorly crystallized CZTS are formed in the sputtered films. The Zn loss leads to the appearance of SnS. A sulfurization process can obviously improve the crystallinity of CZTS and films with grain size of several hundred nanometers can be obtained after sulfurization. The optical band gap of the films is estimated to be 1.57 eV. The electrical properties of the 4.04% efficient solar cell were investigated and it has been found that cell has obvious deficiency in minority carrier lifetime. This deficiency should be responsible for the low Jsc and low Voc of our cell.http://dx.doi.org/10.1155/2013/929454 |
| spellingShingle | Min Xie Daming Zhuang Ming Zhao Zuolong Zhuang Liangqi Ouyang Xiaolong Li Jun Song Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target International Journal of Photoenergy |
| title | Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target |
| title_full | Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target |
| title_fullStr | Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target |
| title_full_unstemmed | Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target |
| title_short | Preparation and Characterization of Cu2ZnSnS4 Thin Films and Solar Cells Fabricated from Quaternary Cu-Zn-Sn-S Target |
| title_sort | preparation and characterization of cu2znsns4 thin films and solar cells fabricated from quaternary cu zn sn s target |
| url | http://dx.doi.org/10.1155/2013/929454 |
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