Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth
This study establishes a multi-field coupling model that includes a thermal field, flow field, oxygen and carbon impurity concentration field, and magnetic field, focusing on controlling the transport of oxygen impurities at the free surface of the melt. The effects of cusp magnetic field introducti...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0239067 |
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| _version_ | 1832542747852013568 |
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| author | Wenyong Zhang Dedong Gao Shan Wang Yan An Haohao Wu Haixin Lin Lin Hou |
| author_facet | Wenyong Zhang Dedong Gao Shan Wang Yan An Haohao Wu Haixin Lin Lin Hou |
| author_sort | Wenyong Zhang |
| collection | DOAJ |
| description | This study establishes a multi-field coupling model that includes a thermal field, flow field, oxygen and carbon impurity concentration field, and magnetic field, focusing on controlling the transport of oxygen impurities at the free surface of the melt. The effects of cusp magnetic field introduction, argon inlet flow velocity, and furnace pressure on the transport of oxygen and carbon impurities are analyzed, and the concentration field distribution of oxygen and carbon impurities within the furnace at the equal-diameter stage (300 mm) under different parameters is obtained. The results show that the method combining the cusp magnetic field with adjustments in furnace pressure and argon flow velocity can significantly reduce the oxygen concentration in the melt below the crystal and effectively expel oxygen and carbon impurities, providing optimization references for applying cusp magnetic fields and reducing oxygen and carbon impurities in the melt for large-sized Czochralski single-crystal silicon. |
| format | Article |
| id | doaj-art-c5b4ea2819c047789363f1ceff164db7 |
| institution | Kabale University |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-c5b4ea2819c047789363f1ceff164db72025-02-03T16:40:42ZengAIP Publishing LLCAIP Advances2158-32262025-01-01151015103015103-1810.1063/5.0239067Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growthWenyong Zhang0Dedong Gao1Shan Wang2Yan An3Haohao Wu4Haixin Lin5Lin Hou6School of Mechanical Engineering, Qinghai University, Xining 810016, Qinghai, ChinaSchool of Mechanical Engineering, Qinghai University, Xining 810016, Qinghai, ChinaSchool of Mechanical Engineering, Qinghai University, Xining 810016, Qinghai, ChinaSichuan Gokin Solar Technology Co., Ltd, Yibin 644000, Sichuan, ChinaSchool of Mechanical Engineering, Qinghai University, Xining 810016, Qinghai, ChinaSchool of Mechanical Engineering, Qinghai University, Xining 810016, Qinghai, ChinaSchool of Mechanical Engineering, Qinghai University, Xining 810016, Qinghai, ChinaThis study establishes a multi-field coupling model that includes a thermal field, flow field, oxygen and carbon impurity concentration field, and magnetic field, focusing on controlling the transport of oxygen impurities at the free surface of the melt. The effects of cusp magnetic field introduction, argon inlet flow velocity, and furnace pressure on the transport of oxygen and carbon impurities are analyzed, and the concentration field distribution of oxygen and carbon impurities within the furnace at the equal-diameter stage (300 mm) under different parameters is obtained. The results show that the method combining the cusp magnetic field with adjustments in furnace pressure and argon flow velocity can significantly reduce the oxygen concentration in the melt below the crystal and effectively expel oxygen and carbon impurities, providing optimization references for applying cusp magnetic fields and reducing oxygen and carbon impurities in the melt for large-sized Czochralski single-crystal silicon.http://dx.doi.org/10.1063/5.0239067 |
| spellingShingle | Wenyong Zhang Dedong Gao Shan Wang Yan An Haohao Wu Haixin Lin Lin Hou Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth AIP Advances |
| title | Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth |
| title_full | Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth |
| title_fullStr | Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth |
| title_full_unstemmed | Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth |
| title_short | Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth |
| title_sort | simulation of oxygen and carbon impurity transport during magnetically controlled czochralski silicon growth |
| url | http://dx.doi.org/10.1063/5.0239067 |
| work_keys_str_mv | AT wenyongzhang simulationofoxygenandcarbonimpuritytransportduringmagneticallycontrolledczochralskisilicongrowth AT dedonggao simulationofoxygenandcarbonimpuritytransportduringmagneticallycontrolledczochralskisilicongrowth AT shanwang simulationofoxygenandcarbonimpuritytransportduringmagneticallycontrolledczochralskisilicongrowth AT yanan simulationofoxygenandcarbonimpuritytransportduringmagneticallycontrolledczochralskisilicongrowth AT haohaowu simulationofoxygenandcarbonimpuritytransportduringmagneticallycontrolledczochralskisilicongrowth AT haixinlin simulationofoxygenandcarbonimpuritytransportduringmagneticallycontrolledczochralskisilicongrowth AT linhou simulationofoxygenandcarbonimpuritytransportduringmagneticallycontrolledczochralskisilicongrowth |