Simulation of oxygen and carbon impurity transport during magnetically controlled Czochralski silicon growth
This study establishes a multi-field coupling model that includes a thermal field, flow field, oxygen and carbon impurity concentration field, and magnetic field, focusing on controlling the transport of oxygen impurities at the free surface of the melt. The effects of cusp magnetic field introducti...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0239067 |
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