Modification of porous silicon using pulsed ion beam of nanosecond duration
The effect of a pulsed ion beam of nanosecond duration on the morphology, chemical composition, and electronic structure of porous silicon is studied. The gas sensitivity of the initial and irradiated samples is studied under exposure to NO2 and degassing in air. Its degradation is assessed ov...
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| Format: | Article |
| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2018-07-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/75-79%20%D0%9F%D0%BE%D0%B2%D0%BE%D1%80%D0%BE%D0%B7%D0%BD%D1%8E%D0%BA%20%D0%A1.%20%D0%9D.,%20%D0%A0%D0%BE%D1%81%D0%BB%D0%B8%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%95..pdf |
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| _version_ | 1832569074513608704 |
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| author | S. N. Povoroznyuk V. E. Roslikov |
| author_facet | S. N. Povoroznyuk V. E. Roslikov |
| author_sort | S. N. Povoroznyuk |
| collection | DOAJ |
| description | The effect of a pulsed ion beam of nanosecond duration on the
morphology, chemical composition, and electronic structure of
porous silicon is studied. The gas sensitivity of the initial and
irradiated samples is studied under exposure to NO2
and degassing
in air. Its degradation is assessed over time. It is established that
both the initial and irradiated samples have a sensitivity to NO2
. In
the case of the initial porous silicon, it disappears after 6 months,
and in irradiated silicon it decreases after 3 months and then
remains practically at the same level. This is a consequence of the
formation of a passivating film, which prevents the degradation of
the composition and properties of porous silicon when it comes
into contact with the environment. The presence of such a film,
represented by a SiO2
, is confirmed by X-ray photoelectron
spectroscopy (XPS) data. |
| format | Article |
| id | doaj-art-c5081c602eb24e7cbe2c2f77d32fa3b1 |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2018-07-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-c5081c602eb24e7cbe2c2f77d32fa3b12025-02-02T23:19:54ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412018-07-013 (159)757910.25206/1813-8225-2018-159-75-79Modification of porous silicon using pulsed ion beam of nanosecond durationS. N. Povoroznyuk0V. E. Roslikov1Omsk Scientific Center of the Siberian Branch of the Russian Academy of SciencesOmsk State Technical UniversityThe effect of a pulsed ion beam of nanosecond duration on the morphology, chemical composition, and electronic structure of porous silicon is studied. The gas sensitivity of the initial and irradiated samples is studied under exposure to NO2 and degassing in air. Its degradation is assessed over time. It is established that both the initial and irradiated samples have a sensitivity to NO2 . In the case of the initial porous silicon, it disappears after 6 months, and in irradiated silicon it decreases after 3 months and then remains practically at the same level. This is a consequence of the formation of a passivating film, which prevents the degradation of the composition and properties of porous silicon when it comes into contact with the environment. The presence of such a film, represented by a SiO2 , is confirmed by X-ray photoelectron spectroscopy (XPS) data.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/75-79%20%D0%9F%D0%BE%D0%B2%D0%BE%D1%80%D0%BE%D0%B7%D0%BD%D1%8E%D0%BA%20%D0%A1.%20%D0%9D.,%20%D0%A0%D0%BE%D1%81%D0%BB%D0%B8%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%95..pdfporous siliconx-ray photoelectron spectroscopypulsed ion beamgas sensitivity |
| spellingShingle | S. N. Povoroznyuk V. E. Roslikov Modification of porous silicon using pulsed ion beam of nanosecond duration Омский научный вестник porous silicon x-ray photoelectron spectroscopy pulsed ion beam gas sensitivity |
| title | Modification of porous silicon using pulsed ion beam of nanosecond duration |
| title_full | Modification of porous silicon using pulsed ion beam of nanosecond duration |
| title_fullStr | Modification of porous silicon using pulsed ion beam of nanosecond duration |
| title_full_unstemmed | Modification of porous silicon using pulsed ion beam of nanosecond duration |
| title_short | Modification of porous silicon using pulsed ion beam of nanosecond duration |
| title_sort | modification of porous silicon using pulsed ion beam of nanosecond duration |
| topic | porous silicon x-ray photoelectron spectroscopy pulsed ion beam gas sensitivity |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2018/3%20(159)/75-79%20%D0%9F%D0%BE%D0%B2%D0%BE%D1%80%D0%BE%D0%B7%D0%BD%D1%8E%D0%BA%20%D0%A1.%20%D0%9D.,%20%D0%A0%D0%BE%D1%81%D0%BB%D0%B8%D0%BA%D0%BE%D0%B2%20%D0%92.%20%D0%95..pdf |
| work_keys_str_mv | AT snpovoroznyuk modificationofporoussiliconusingpulsedionbeamofnanosecondduration AT veroslikov modificationofporoussiliconusingpulsedionbeamofnanosecondduration |