Compact Modeling of 3D NAND Flash Memory With Ferroelectric Characteristics: A Comparative Analysis of O/N/O and O/N/F Structures

This study presents a compact model for three-dimensional (3D) NAND flash memory that incorporates ferroelectric properties to enable accurate circuit-level simulations. The model, implemented in Verilog-A, captures the saturation polarization-electric field (P-E) hysteresis behavior of a ferroelect...

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Bibliographic Details
Main Authors: Sunghyun Woo, Jihwan Lee, Gyunseok Ryu, Myounggon Kang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10988629/
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