Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance
The objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plas...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10734138/ |
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| author | Fernando Jose da Costa Aseel Zeinati Renan Trevisoli Durga Misra Rodrigo Trevisoli Doria |
| author_facet | Fernando Jose da Costa Aseel Zeinati Renan Trevisoli Durga Misra Rodrigo Trevisoli Doria |
| author_sort | Fernando Jose da Costa |
| collection | DOAJ |
| description | The objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated <inline-formula> <tex-math notation="LaTeX">${\mathrm { HfO}}_{2}$ </tex-math></inline-formula> and another with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy-related defects in the insulator (HfO2 w/trt) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m2 was observed for the same device when it was subjected to a <inline-formula> <tex-math notation="LaTeX">$144~\mu $ </tex-math></inline-formula>s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems. Also, the dielectric constant modulates due to the migration of oxygen atoms inside the device’s insulator. |
| format | Article |
| id | doaj-art-c1b8b4786202495882adad1d392cf7f7 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-c1b8b4786202495882adad1d392cf7f72025-01-28T00:00:43ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-01121037104310.1109/JEDS.2024.348562210734138Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM CapacitanceFernando Jose da Costa0https://orcid.org/0000-0002-4581-3270Aseel Zeinati1Renan Trevisoli2https://orcid.org/0000-0001-5876-8731Durga Misra3https://orcid.org/0000-0001-6844-6058Rodrigo Trevisoli Doria4https://orcid.org/0000-0003-4448-4337Department of Electrical Engineering, Centro Universitario da FEI, São Bernardo do Campo, BrazilHelen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USAFaculty of Exact Sciences and Technology, Pontificia Universidade Catolica de São Paulo, São Paulo, BrazilHelen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USADepartment of Electrical Engineering, Centro Universitario da FEI, São Bernardo do Campo, BrazilThe objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated <inline-formula> <tex-math notation="LaTeX">${\mathrm { HfO}}_{2}$ </tex-math></inline-formula> and another with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy-related defects in the insulator (HfO2 w/trt) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m2 was observed for the same device when it was subjected to a <inline-formula> <tex-math notation="LaTeX">$144~\mu $ </tex-math></inline-formula>s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems. Also, the dielectric constant modulates due to the migration of oxygen atoms inside the device’s insulator.https://ieeexplore.ieee.org/document/10734138/MIMReRAMcapacitanceoxygen vacanciesdefectsH-plasma treatment |
| spellingShingle | Fernando Jose da Costa Aseel Zeinati Renan Trevisoli Durga Misra Rodrigo Trevisoli Doria Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance IEEE Journal of the Electron Devices Society MIM ReRAM capacitance oxygen vacancies defects H-plasma treatment |
| title | Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance |
| title_full | Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance |
| title_fullStr | Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance |
| title_full_unstemmed | Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance |
| title_short | Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance |
| title_sort | experimental comparison of hfo sub 2 x sub based reram devices switching properties by the mim capacitance |
| topic | MIM ReRAM capacitance oxygen vacancies defects H-plasma treatment |
| url | https://ieeexplore.ieee.org/document/10734138/ |
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