Experimental Comparison of HfO<sub>2/X</sub>-Based ReRAM Devices Switching Properties by the MIM Capacitance
The objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plas...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10734138/ |
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| Summary: | The objective of this work is to present a comparison of the switching properties in Resistive Random-Access-Memory between two different switching layer devices through the capacitance measurements. The analysis was carried out in two devices with different insulating layers, one composed of H-plasma-treated <inline-formula> <tex-math notation="LaTeX">${\mathrm { HfO}}_{2}$ </tex-math></inline-formula> and another with a stoichiometric HfO2. The device with a higher quantity of oxygen vacancy-related defects in the insulator (HfO2 w/trt) presents a wider spread of the capacitance with the application of a range of varying pulse widths. An increase in the capacitance from 3.904 to 3.917 pF/<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m2 was observed for the same device when it was subjected to a <inline-formula> <tex-math notation="LaTeX">$144~\mu $ </tex-math></inline-formula>s pulse width, demonstrating a conductance quantization required for the application in in-memory computing systems. Also, the dielectric constant modulates due to the migration of oxygen atoms inside the device’s insulator. |
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| ISSN: | 2168-6734 |