Intervalence plasmons in boron-doped diamond
Abstract Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping o...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55353-0 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Abstract Doped semiconductors can exhibit metallic-like properties ranging from superconductivity to tunable localized surface plasmon resonances. Diamond is a wide-bandgap semiconductor that is rendered electronically active by incorporating a hole dopant, boron. While the effects of boron doping on the electronic band structure of diamond are well-studied, any link between charge carriers and plasmons has never been shown. Here, we report intervalence plasmons in boron-doped diamond, defined as collective electronic excitations between the valence subbands, opened up by the presence of holes. Evidence for these low-energy excitations is provided by valence electron energy loss spectroscopy and near-field infrared spectroscopy. The measured spectra are subsequently reproduced by first-principles calculations based on the contribution of intervalence band transitions to the dielectric function. Our calculations also reveal that the real part of the dielectric function exhibits a crossover characteristic of metallicity. These results suggest a new mechanism for inducing plasmon-like behavior in doped semiconductors, and the possibility of attaining such properties in diamond, a key emerging material for quantum information technologies. |
|---|---|
| ISSN: | 2041-1723 |