Volatile and Non-Volatile Single Electron Memory

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in orde...

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Bibliographic Details
Main Authors: A. Touati , A. Kalboussi 
Format: Article
Language:English
Published: Sumy State University 2013-07-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2013/3/articles/jnep_2013_V5_03003.pdf
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