The Ferro-Power MOSFET: Enhancing Short-Circuit Robustness in Power Switches With a Ferroelectric Gate Stack

Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are essential in modern electronics, enabling efficient power conversion and control in a wide range of applications. Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have been shown to boost device...

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Bibliographic Details
Main Authors: Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace, Giovanni A. Salvatore
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10945321/
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