Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the gener...

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Bibliographic Details
Main Authors:	Yen-Chih Chiang, Bing-Cheng Lin, Kuo-Ju Chen, Sheng-Huan Chiu, Chien-Chung Lin, Po-Tsung Lee, Min-Hsiung Shih, Hao-Chung Kuo
Format:	Article
Language:	English
Published:	Wiley 2014-01-01
Series:	International Journal of Photoenergy
Online Access:	http://dx.doi.org/10.1155/2014/385257
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