Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit

Abstract Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage‐controlled oscillators (VCOs) without affecting the circuit specificat...

Full description

Saved in:
Bibliographic Details
Main Authors: Arumugam Karthigeyan, Sankararajan Radha, Esakkimuthu Manikandan
Format: Article
Language:English
Published: Wiley 2022-03-01
Series:IET Circuits, Devices and Systems
Subjects:
Online Access:https://doi.org/10.1049/cds2.12094
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1832546833041195008
author Arumugam Karthigeyan
Sankararajan Radha
Esakkimuthu Manikandan
author_facet Arumugam Karthigeyan
Sankararajan Radha
Esakkimuthu Manikandan
author_sort Arumugam Karthigeyan
collection DOAJ
description Abstract Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage‐controlled oscillators (VCOs) without affecting the circuit specifications. A circuit asymmetry technique is used for faster recovery of the oscillator in the event of a single event transient (SET) caused by an ion hit. Also, a new SET tolerant inductor capacitor‐voltage controlled oscillator (LC‐VCO) topology is proposed for a radiation environment that shows reduced phase displacement, amplitude displacement, and recovery time. A comparison has been made with various LC‐VCOs that have an inherent rad‐hard capability which proves a significant improvement in SET sensitivity.
format Article
id doaj-art-bfe13102725d49c19c5fd63e69f3fb1b
institution Kabale University
issn 1751-858X
1751-8598
language English
publishDate 2022-03-01
publisher Wiley
record_format Article
series IET Circuits, Devices and Systems
spelling doaj-art-bfe13102725d49c19c5fd63e69f3fb1b2025-02-03T06:47:11ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982022-03-0116217818810.1049/cds2.12094Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuitArumugam Karthigeyan0Sankararajan Radha1Esakkimuthu Manikandan2Department of Electronics and Communication Engineering Sri Sivasubramaniya Nadar (SSN) College of Engineering Kalavakkam IndiaDepartment of Electronics and Communication Engineering Sri Sivasubramaniya Nadar (SSN) College of Engineering Kalavakkam IndiaSchool of Electronics Engineering (SENSE) Vellore Institute of Technology Chennai IndiaAbstract Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage‐controlled oscillators (VCOs) without affecting the circuit specifications. A circuit asymmetry technique is used for faster recovery of the oscillator in the event of a single event transient (SET) caused by an ion hit. Also, a new SET tolerant inductor capacitor‐voltage controlled oscillator (LC‐VCO) topology is proposed for a radiation environment that shows reduced phase displacement, amplitude displacement, and recovery time. A comparison has been made with various LC‐VCOs that have an inherent rad‐hard capability which proves a significant improvement in SET sensitivity.https://doi.org/10.1049/cds2.12094radiation hardening (electronics)voltage‐controlled oscillators
spellingShingle Arumugam Karthigeyan
Sankararajan Radha
Esakkimuthu Manikandan
Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
IET Circuits, Devices and Systems
radiation hardening (electronics)
voltage‐controlled oscillators
title Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
title_full Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
title_fullStr Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
title_full_unstemmed Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
title_short Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
title_sort single event transient mitigation techniques for a cross coupled lc oscillator including a single event transient hardened cmos lc vco circuit
topic radiation hardening (electronics)
voltage‐controlled oscillators
url https://doi.org/10.1049/cds2.12094
work_keys_str_mv AT arumugamkarthigeyan singleeventtransientmitigationtechniquesforacrosscoupledlcoscillatorincludingasingleeventtransienthardenedcmoslcvcocircuit
AT sankararajanradha singleeventtransientmitigationtechniquesforacrosscoupledlcoscillatorincludingasingleeventtransienthardenedcmoslcvcocircuit
AT esakkimuthumanikandan singleeventtransientmitigationtechniquesforacrosscoupledlcoscillatorincludingasingleeventtransienthardenedcmoslcvcocircuit