Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
Abstract Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage‐controlled oscillators (VCOs) without affecting the circuit specificat...
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Wiley
2022-03-01
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Series: | IET Circuits, Devices and Systems |
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Online Access: | https://doi.org/10.1049/cds2.12094 |
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author | Arumugam Karthigeyan Sankararajan Radha Esakkimuthu Manikandan |
author_facet | Arumugam Karthigeyan Sankararajan Radha Esakkimuthu Manikandan |
author_sort | Arumugam Karthigeyan |
collection | DOAJ |
description | Abstract Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage‐controlled oscillators (VCOs) without affecting the circuit specifications. A circuit asymmetry technique is used for faster recovery of the oscillator in the event of a single event transient (SET) caused by an ion hit. Also, a new SET tolerant inductor capacitor‐voltage controlled oscillator (LC‐VCO) topology is proposed for a radiation environment that shows reduced phase displacement, amplitude displacement, and recovery time. A comparison has been made with various LC‐VCOs that have an inherent rad‐hard capability which proves a significant improvement in SET sensitivity. |
format | Article |
id | doaj-art-bfe13102725d49c19c5fd63e69f3fb1b |
institution | Kabale University |
issn | 1751-858X 1751-8598 |
language | English |
publishDate | 2022-03-01 |
publisher | Wiley |
record_format | Article |
series | IET Circuits, Devices and Systems |
spelling | doaj-art-bfe13102725d49c19c5fd63e69f3fb1b2025-02-03T06:47:11ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982022-03-0116217818810.1049/cds2.12094Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuitArumugam Karthigeyan0Sankararajan Radha1Esakkimuthu Manikandan2Department of Electronics and Communication Engineering Sri Sivasubramaniya Nadar (SSN) College of Engineering Kalavakkam IndiaDepartment of Electronics and Communication Engineering Sri Sivasubramaniya Nadar (SSN) College of Engineering Kalavakkam IndiaSchool of Electronics Engineering (SENSE) Vellore Institute of Technology Chennai IndiaAbstract Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage‐controlled oscillators (VCOs) without affecting the circuit specifications. A circuit asymmetry technique is used for faster recovery of the oscillator in the event of a single event transient (SET) caused by an ion hit. Also, a new SET tolerant inductor capacitor‐voltage controlled oscillator (LC‐VCO) topology is proposed for a radiation environment that shows reduced phase displacement, amplitude displacement, and recovery time. A comparison has been made with various LC‐VCOs that have an inherent rad‐hard capability which proves a significant improvement in SET sensitivity.https://doi.org/10.1049/cds2.12094radiation hardening (electronics)voltage‐controlled oscillators |
spellingShingle | Arumugam Karthigeyan Sankararajan Radha Esakkimuthu Manikandan Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit IET Circuits, Devices and Systems radiation hardening (electronics) voltage‐controlled oscillators |
title | Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit |
title_full | Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit |
title_fullStr | Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit |
title_full_unstemmed | Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit |
title_short | Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit |
title_sort | single event transient mitigation techniques for a cross coupled lc oscillator including a single event transient hardened cmos lc vco circuit |
topic | radiation hardening (electronics) voltage‐controlled oscillators |
url | https://doi.org/10.1049/cds2.12094 |
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