Analysis of thermal effects according to channel and drain contact metal distance
Unlike conventional planar metal-oxide-semiconductor field-effect transistors (MOSFET), multi-gate devices such as fin field-effect transistors (FinFET) suffer from serious electrical performance issues due to the self-heating effect (SHE) because the channel is surrounded by the gate dielectric. To...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-01-01
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| Series: | Case Studies in Thermal Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2214157X24016733 |
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