n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes
This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass greater energy barriers that hindered holes injection....
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-04-01
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| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2024.2412104 |
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