Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuits
Indium–phosphide membrane on silicon is a nanophotonics platform which allows for monolithic integration of sub-micron nanophotonic waveguide circuits with native and efficient amplifiers and lasers. Active devices such as amplifiers have a high topography that requires a thick dielectric layer for...
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IOP Publishing
2025-01-01
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| Series: | JPhys Photonics |
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| Online Access: | https://doi.org/10.1088/2515-7647/adaf63 |
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| author | Salim Abdi Kevin Williams Yuqing Jiao |
| author_facet | Salim Abdi Kevin Williams Yuqing Jiao |
| author_sort | Salim Abdi |
| collection | DOAJ |
| description | Indium–phosphide membrane on silicon is a nanophotonics platform which allows for monolithic integration of sub-micron nanophotonic waveguide circuits with native and efficient amplifiers and lasers. Active devices such as amplifiers have a high topography that requires a thick dielectric layer for planarization and wafer bonding, which poses challenges in thermal dissipation. Herein, we comprehensively analyzed the performance of distributed feedback lasers (DFBs) bonded on Si using a 2 µ m-thick benzocyclobutene (BCB) layer, and with and without a 5 µ m-thick gold thermal shunt to the substrate for efficient thermal dissipation. The thermal resistance of shunted devices is 176 and 115 K W ^−1 for 0.5 mm and 0.75 mm lengths, respectively, which is a 2× improvement compared to reference membrane devices with no thermal shunt. This thermal resistance is maintained across various BCB thicknesses up to 30 µ m, ensuring the possibility of using such devices for scalable 3D integration on other platforms or with electronics. Moreover, we showed that the thermal resistance value is around 110–120 K W ^−1 for 0.75 mm-long shunted DFBs having array density values in the range of 40–200 µ m, and that the temperature rise at the end of the DFB contact is as low as 1.3 °C at 8 kA cm ^−2 driving current. Both of these characteristics demonstrate the density scaling potential of these nanophotonic devices. |
| format | Article |
| id | doaj-art-bd1d727bbc43415ca0519670a567152d |
| institution | Kabale University |
| issn | 2515-7647 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
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| series | JPhys Photonics |
| spelling | doaj-art-bd1d727bbc43415ca0519670a567152d2025-02-06T10:17:28ZengIOP PublishingJPhys Photonics2515-76472025-01-017202500310.1088/2515-7647/adaf63Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuitsSalim Abdi0https://orcid.org/0000-0002-1608-8241Kevin Williams1Yuqing Jiao2https://orcid.org/0000-0003-2757-8948Eindhoven Hendrik Casimir Institute (EHCI) , Eindhoven University of Technology, Eindhoven 5600MB, The NetherlandsEindhoven Hendrik Casimir Institute (EHCI) , Eindhoven University of Technology, Eindhoven 5600MB, The NetherlandsEindhoven Hendrik Casimir Institute (EHCI) , Eindhoven University of Technology, Eindhoven 5600MB, The NetherlandsIndium–phosphide membrane on silicon is a nanophotonics platform which allows for monolithic integration of sub-micron nanophotonic waveguide circuits with native and efficient amplifiers and lasers. Active devices such as amplifiers have a high topography that requires a thick dielectric layer for planarization and wafer bonding, which poses challenges in thermal dissipation. Herein, we comprehensively analyzed the performance of distributed feedback lasers (DFBs) bonded on Si using a 2 µ m-thick benzocyclobutene (BCB) layer, and with and without a 5 µ m-thick gold thermal shunt to the substrate for efficient thermal dissipation. The thermal resistance of shunted devices is 176 and 115 K W ^−1 for 0.5 mm and 0.75 mm lengths, respectively, which is a 2× improvement compared to reference membrane devices with no thermal shunt. This thermal resistance is maintained across various BCB thicknesses up to 30 µ m, ensuring the possibility of using such devices for scalable 3D integration on other platforms or with electronics. Moreover, we showed that the thermal resistance value is around 110–120 K W ^−1 for 0.75 mm-long shunted DFBs having array density values in the range of 40–200 µ m, and that the temperature rise at the end of the DFB contact is as low as 1.3 °C at 8 kA cm ^−2 driving current. Both of these characteristics demonstrate the density scaling potential of these nanophotonic devices.https://doi.org/10.1088/2515-7647/adaf63heterogeneous integration3d integrationmembrane photonicsthermal dissipationdensity scaling |
| spellingShingle | Salim Abdi Kevin Williams Yuqing Jiao Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuits JPhys Photonics heterogeneous integration 3d integration membrane photonics thermal dissipation density scaling |
| title | Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuits |
| title_full | Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuits |
| title_fullStr | Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuits |
| title_full_unstemmed | Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuits |
| title_short | Enhanced thermal dissipation for BCB-bonded 3D integrated membrane photonic circuits |
| title_sort | enhanced thermal dissipation for bcb bonded 3d integrated membrane photonic circuits |
| topic | heterogeneous integration 3d integration membrane photonics thermal dissipation density scaling |
| url | https://doi.org/10.1088/2515-7647/adaf63 |
| work_keys_str_mv | AT salimabdi enhancedthermaldissipationforbcbbonded3dintegratedmembranephotoniccircuits AT kevinwilliams enhancedthermaldissipationforbcbbonded3dintegratedmembranephotoniccircuits AT yuqingjiao enhancedthermaldissipationforbcbbonded3dintegratedmembranephotoniccircuits |