Room-temperature band-edge photoluminescence of GaAs irradiated with medium-energy N+ ions
The implanted semiconductors need annealing-induced restoration of luminescent and electrical properties for further applications. However, it is still unknown how the effect of the extra-defect formation near the surface influences on the reduction process, as is the magnitude of this effect in GaA...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-01-01
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| Series: | Results in Surfaces and Interfaces |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666845925000388 |
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