The Barrier Inhomogeneity and the Electrical Characteristics of W/Au <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes

The Barrier Inhomogeneity and the Electrical Characteristics of W/Au <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes

In this work, the electrical properties of the Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes (SBDs) using W/Au as the Schottky metal were investigated. Due to the 450 °C post-anode annealing (PAA), the reduced oxygen vacancy defects on the <i>β</i>-Ga<sub...

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Bibliographic Details
Main Authors: Lei Xie, Tao Zhang, Shengrui Xu, Huake Su, Hongchang Tao, Yuan Gao, Xu Liu, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Micromachines
Subjects:
Ga<sub>2</sub>O<sub>3</sub> SBDs
W/Au Schottky contact
barrier inhomogeneity
Online Access:https://www.mdpi.com/2072-666X/16/4/369
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