Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup>
This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 <inline-formula> <tex-math notation="L...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10496446/ |
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