Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm<sup>2</sup>
This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 <inline-formula> <tex-math notation="L...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10496446/ |
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| Summary: | This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2, a high current swing of 1011, and a high breakdown voltage of 850 V with a 5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>-thick drift layer, leading to a Baliga’s figure of merit (BFOM) of 2.89 GW/cm2. The diode performance at elevated temperatures and the OFF-state leakage mechanism are analyzed. The demonstrated fully-vertical GaN-on-SiC p-i-n diode with a conductive buffer reveals a simple way towards realizing high-performance fully-vertical GaN-on-SiC devices for high power applications. |
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| ISSN: | 2168-6734 |