Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique
In this study, the authors focus mainly on the investigation of Kriging interpolation method to elaborate surrogate models of the nanoscale double‐gate metal oxide silicon field effect transistors (DG MOSFET) analogue/RF performance under critical operational conditions. The elaboration of such mode...
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| Format: | Article |
| Language: | English |
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Wiley
2017-11-01
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| Series: | IET Circuits, Devices and Systems |
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| Online Access: | https://doi.org/10.1049/iet-cds.2017.0204 |
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| author | Toufik Bentrcia Fayçal Djeffal Elasaad Chebaki |
| author_facet | Toufik Bentrcia Fayçal Djeffal Elasaad Chebaki |
| author_sort | Toufik Bentrcia |
| collection | DOAJ |
| description | In this study, the authors focus mainly on the investigation of Kriging interpolation method to elaborate surrogate models of the nanoscale double‐gate metal oxide silicon field effect transistors (DG MOSFET) analogue/RF performance under critical operational conditions. The elaboration of such models is made possible through the generation of computer experiments using ATLAS‐2D simulator, where the numerical simulations or experimental measurements, account for the accurate behaviour of the device including the ageing phenomena, short channel and quantum confinement effects. The validity of the obtained Kriging models is tested by comparing the predicted responses of the device with their numerical counterpart in terms of some statistical criteria namely the sum of relative errors, the mean percentage of absolute errors and the correlation coefficient. It is also shown that the obtained Kriging interpolation models are precise enough to be used as objective functions in the context of a genetic algorithm optimisation with the aim of improving the device analogue/RF performance in terms of transconductance and cut‐off frequency parameters. Therefore, this study may provide more insights regarding the investigation of surrogate modelling tools in the field of deep nanoscale devices especially with the intractable mission of developing physical based models at this scale for nanoelectronic simulators. |
| format | Article |
| id | doaj-art-b95facf41fa243299d6ceebf34371ece |
| institution | Kabale University |
| issn | 1751-858X 1751-8598 |
| language | English |
| publishDate | 2017-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Circuits, Devices and Systems |
| spelling | doaj-art-b95facf41fa243299d6ceebf34371ece2025-02-03T06:47:34ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982017-11-0111661862310.1049/iet-cds.2017.0204Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling techniqueToufik Bentrcia0Fayçal Djeffal1Elasaad Chebaki2LEPCM, Department of PhysicsUniversity of Batna 1Batna05000AlgeriaLEPCM, Department of PhysicsUniversity of Batna 1Batna05000AlgeriaLEA, Department of ElectronicsUniversity of Batna 2Batna05000AlgeriaIn this study, the authors focus mainly on the investigation of Kriging interpolation method to elaborate surrogate models of the nanoscale double‐gate metal oxide silicon field effect transistors (DG MOSFET) analogue/RF performance under critical operational conditions. The elaboration of such models is made possible through the generation of computer experiments using ATLAS‐2D simulator, where the numerical simulations or experimental measurements, account for the accurate behaviour of the device including the ageing phenomena, short channel and quantum confinement effects. The validity of the obtained Kriging models is tested by comparing the predicted responses of the device with their numerical counterpart in terms of some statistical criteria namely the sum of relative errors, the mean percentage of absolute errors and the correlation coefficient. It is also shown that the obtained Kriging interpolation models are precise enough to be used as objective functions in the context of a genetic algorithm optimisation with the aim of improving the device analogue/RF performance in terms of transconductance and cut‐off frequency parameters. Therefore, this study may provide more insights regarding the investigation of surrogate modelling tools in the field of deep nanoscale devices especially with the intractable mission of developing physical based models at this scale for nanoelectronic simulators.https://doi.org/10.1049/iet-cds.2017.0204nanoscale DG MOSFET devicesKriging metamodelling techniquedouble-gate metal oxide silicon field effect transistorsRF performanceanalogue performanceATLAS-2D simulator |
| spellingShingle | Toufik Bentrcia Fayçal Djeffal Elasaad Chebaki Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique IET Circuits, Devices and Systems nanoscale DG MOSFET devices Kriging metamodelling technique double-gate metal oxide silicon field effect transistors RF performance analogue performance ATLAS-2D simulator |
| title | Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique |
| title_full | Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique |
| title_fullStr | Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique |
| title_full_unstemmed | Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique |
| title_short | Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique |
| title_sort | approach for designing and modelling of nanoscale dg mosfet devices using kriging metamodelling technique |
| topic | nanoscale DG MOSFET devices Kriging metamodelling technique double-gate metal oxide silicon field effect transistors RF performance analogue performance ATLAS-2D simulator |
| url | https://doi.org/10.1049/iet-cds.2017.0204 |
| work_keys_str_mv | AT toufikbentrcia approachfordesigningandmodellingofnanoscaledgmosfetdevicesusingkrigingmetamodellingtechnique AT faycaldjeffal approachfordesigningandmodellingofnanoscaledgmosfetdevicesusingkrigingmetamodellingtechnique AT elasaadchebaki approachfordesigningandmodellingofnanoscaledgmosfetdevicesusingkrigingmetamodellingtechnique |