Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique

Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique

In this study, the authors focus mainly on the investigation of Kriging interpolation method to elaborate surrogate models of the nanoscale double‐gate metal oxide silicon field effect transistors (DG MOSFET) analogue/RF performance under critical operational conditions. The elaboration of such mode...

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Bibliographic Details
Main Authors: Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki
Format: Article
Language:English
Published: Wiley 2017-11-01
Series:IET Circuits, Devices and Systems
Subjects:
nanoscale DG MOSFET devices
Kriging metamodelling technique
double-gate metal oxide silicon field effect transistors
RF performance
analogue performance
ATLAS-2D simulator
Online Access:https://doi.org/10.1049/iet-cds.2017.0204
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https://doi.org/10.1049/iet-cds.2017.0204

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