Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering

Abstract Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, s...

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Main Authors: Marek Bouška, Jan Gutwirth, Kamil Bečvář, Vladimír Kucek, Stanislav Šlang, Petr Janíček, Lubomír Prokeš, Josef Havel, Virginie Nazabal, Petr Němec
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Subjects:
Phase change materials
Scandium doping
Germanium telluride
Thin films
Online Access:https://doi.org/10.1038/s41598-024-84963-3
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https://doi.org/10.1038/s41598-024-84963-3

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