Electrical and photoelectric properties of photocell on base of Schottky barrier contact Au-n-GaAs
Structure and strategy of the fabrication of the photocell on the base of the Schottky barrier contact Au-n-GaAs are сonsidered. There are measured I(V)-features of photocells, their C-V-features, spectrums photovoltage and current of the short circuit, and determined height of the Schottky barr...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-10-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/4%20(166)/55-60%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| Summary: | Structure and strategy of the fabrication of the photocell on the
base of the Schottky barrier contact Au-n-GaAs are сonsidered.
There are measured I(V)-features of photocells, their C-V-features,
spectrums photovoltage and current of the short circuit, and
determined height of the Schottky barrier contacts Au-n-n+-
GaAs by photoelectric method. It is shown that air annealing of
structures n-n+-GaAs-AuGe under (200–220) ºC within 30 minutes
before precipitating a film Au on n-GaAs brings to the reduction
on two- three orders direct I
dir and inverse I
inv currents (under 0,5
V) to reduction on three orders of density of the current of the
saturation J0
, to reduction of capacities of photocells before values
(204–191) pF under inverse tensions (0,22–0,96) V, reduction of
the current of the short circuit of photocells and to increase their
photovoltage that connected with formation fine oxide layer on
n-GaAs under air annealing of structures n-n+-GaAs-AuGe. |
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| ISSN: | 1813-8225 2541-7541 |