To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell

The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light so...

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Main Authors: Yu-Jen Hsiao, Chung-Hsin Lu, Te-Hua Fang
Format: Article
Language:English
Published: Wiley 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/561948
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author Yu-Jen Hsiao
Chung-Hsin Lu
Te-Hua Fang
author_facet Yu-Jen Hsiao
Chung-Hsin Lu
Te-Hua Fang
author_sort Yu-Jen Hsiao
collection DOAJ
description The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%.
format Article
id doaj-art-b6d76a0e2c5543b18b01518834c9621d
institution Kabale University
issn 1110-662X
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language English
publishDate 2013-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-b6d76a0e2c5543b18b01518834c9621d2025-02-03T05:59:44ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/561948561948To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar CellYu-Jen Hsiao0Chung-Hsin Lu1Te-Hua Fang2National Nano Device Laboratories, Tainan 741, TaiwanDepartment of Chemical Engineering, National Taiwan University, Taipei 617, TaiwanDepartment of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, TaiwanThe ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%.http://dx.doi.org/10.1155/2013/561948
spellingShingle Yu-Jen Hsiao
Chung-Hsin Lu
Te-Hua Fang
To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
International Journal of Photoenergy
title To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
title_full To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
title_fullStr To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
title_full_unstemmed To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
title_short To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
title_sort to enhance performance of light soaking process on zns cuin1 xgaxse2 solar cell
url http://dx.doi.org/10.1155/2013/561948
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AT chunghsinlu toenhanceperformanceoflightsoakingprocessonznscuin1xgaxse2solarcell
AT tehuafang toenhanceperformanceoflightsoakingprocessonznscuin1xgaxse2solarcell