To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light so...
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Format: | Article |
Language: | English |
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Wiley
2013-01-01
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2013/561948 |
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author | Yu-Jen Hsiao Chung-Hsin Lu Te-Hua Fang |
author_facet | Yu-Jen Hsiao Chung-Hsin Lu Te-Hua Fang |
author_sort | Yu-Jen Hsiao |
collection | DOAJ |
description | The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%. |
format | Article |
id | doaj-art-b6d76a0e2c5543b18b01518834c9621d |
institution | Kabale University |
issn | 1110-662X 1687-529X |
language | English |
publishDate | 2013-01-01 |
publisher | Wiley |
record_format | Article |
series | International Journal of Photoenergy |
spelling | doaj-art-b6d76a0e2c5543b18b01518834c9621d2025-02-03T05:59:44ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/561948561948To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar CellYu-Jen Hsiao0Chung-Hsin Lu1Te-Hua Fang2National Nano Device Laboratories, Tainan 741, TaiwanDepartment of Chemical Engineering, National Taiwan University, Taipei 617, TaiwanDepartment of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 807, TaiwanThe ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%.http://dx.doi.org/10.1155/2013/561948 |
spellingShingle | Yu-Jen Hsiao Chung-Hsin Lu Te-Hua Fang To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell International Journal of Photoenergy |
title | To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell |
title_full | To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell |
title_fullStr | To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell |
title_full_unstemmed | To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell |
title_short | To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell |
title_sort | to enhance performance of light soaking process on zns cuin1 xgaxse2 solar cell |
url | http://dx.doi.org/10.1155/2013/561948 |
work_keys_str_mv | AT yujenhsiao toenhanceperformanceoflightsoakingprocessonznscuin1xgaxse2solarcell AT chunghsinlu toenhanceperformanceoflightsoakingprocessonznscuin1xgaxse2solarcell AT tehuafang toenhanceperformanceoflightsoakingprocessonznscuin1xgaxse2solarcell |