To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell
The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light so...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/561948 |
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| Summary: | The ZnS/CuInGaSe2 heterojunction solar cell fabricated on Mo coated glass is studied. The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. The light soaking effect of photoactive film for 10 min results in an increase in F.F. from 55.8 to 64%, but series resistivity from 7.4 to 3.8 Ω. The efficiency of the devices improved from 8.12 to 9.50%. |
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| ISSN: | 1110-662X 1687-529X |