High-Isolation CMOS T/R Switch Design Using a Two-Stage Equivalent Transmission Line Structure

High-Isolation CMOS T/R Switch Design Using a Two-Stage Equivalent Transmission Line Structure

A fully integrated Ku-band transmit/receive (T/R) switch based on a two-stage equivalent transmission line structure has been designed using a 180-nm complementary metal-oxide-semiconductor (CMOS) process. An analysis shows a relation between the series inductance and turn-on resistance for high iso...

Full description

Saved in:
Bibliographic Details
Main Authors: Chenxi Zhao, Yipeng Wu, Huihua Liu, Yunqiu Wu, KAI Kang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Access
Subjects:
CMOS transmit/receive (T/R) switch
lumped equivalent transmission line structure
insertion loss
isolation
power-handling capability
full integration
Online Access:https://ieeexplore.ieee.org/document/8064630/
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://ieeexplore.ieee.org/document/8064630/

Similar Items